Fabrication of high-efficiency Yb:Y2O3 laser ceramics without photodarkening

High-efficiency Yb:Y₂O₃ laser ceramics were fabricated using the vacuum-sintering plus hot isostatic pressing (HIP) without sintering additives. High-purity well-dispersed nanocrystalline Yb:Y₂O₃ powder was synthesized using a modified co-precipitation method in-house. The green bodies were first vacuum sintered at a temperature as low as 1430°C and then HIPed at 1450°C. Finally, the samples were air annealed at 800°C for 10 h. Although no sintering aids were used, full density of the samples with excellent optical homogeneity and an inline transmission of 80% at 400 nm could be obtained. Moreover, photodarkening phenomenon was not detected in the ceramics. Preliminary laser experiment with the fabricated ceramics in a two-mirror cavity has demonstrated 32 W continuous-wave (CW) output at ∼1077 nm with an optical-to-optical conversion efficiency of 58.2%. To the best of our knowledge, this is so far the highest CW output power and optical-to-optical conversion efficiency achieved with the Yb³⁺-doped sesquioxide ceramics in a simple two-mirror cavity.     

Metal modified (Ni,Ce, Ta) Ti/SnO2–Sb2O5–RuO2 electrodes for enhanced electrochemical degradation of Orange G

Journal of Applied Electrochemistry - Ni, Ce, and Ta modified Ti/SnO2–Sb2O5–RuO2 anodes were first prepared by thermal decomposition strategy and applied for Orange G degradation to...     

高光谱成像用高帧频CMOS图像传感器北大核心

针对高帧频、全局曝光和光谱平坦等成像应用需求,设计了一款高光谱成像用CMOS图像传感器。其光敏元采用PN型光电二极管,读出电路采用5T像素结构。采用列读出电路以及高速多通道模拟信号并行读出的设计方案来获得低像素固定图像噪声(FPN)和非均匀性抑制。芯片采用ASMC 0.35μm三层金属两层多晶硅标准CMOS工艺流片,为了抑制光电二极管的光谱干涉效应,后续进行了光谱平坦化VAE特殊工艺,并对器件的光电性能进行了测试评估。电路测试结果符合理论设计预期,成像效果良好,像素具备积分可调和全局快门功能,最终实现的像素规模为512×256,像元尺寸为30μm×30μm,最大满阱电子为400 ke^(-),FPN小于0.2%,动态范围为72 dB,帧频为450 f/s,相邻10 nm波段范围内量子效率相差小于10%,可满足高光谱成像系统对CMOS成像器件的要求。